Atomic Layer Deposition Of Cobalt Oxide Thin Films Using Cyclopentadienylcobalt Dicarbonyl And Ozone At Low Temperatures Journal Of Vacuum Science Technology A Vol 31 No 1
CCTBA Ingredient Name % CAS Number Dicobalt Decomposition products include carbon oxides (CO X) and cobalt oxides CCTBA was heated up to 50 °C and fed into the chamber without introducing a carrier gas To check the ALD window of CCTBA, Co films were deposited at different temperatures
Cctba decomposition temperature
Cctba decomposition temperature-TECHCET CA LLC, Business & Technology ConsultantsDeposition at 68°C was governed by selflimiting surface reactions At 80°C or higher, the films
Atomic Layer Deposition Of Cobalt Oxide Thin Films Using Cyclopentadienylcobalt Dicarbonyl And Ozone At Low Temperatures Journal Of Vacuum Science Technology A Vol 31 No 1
The conditions for deposition of CCTBA were precursor delivery temperature=35° C, wafer temperature=175° C, deposition time=3 minutes Cobalt film deposited from CCTBA at 150° CSubstrate temperature This can be explained by the thermal decomposition of CCTBA at 80 C and above;Plasma Enhanced Atomic Layer Deposition publications using Dicobalt Hexacarbonyl TertButylAcetylene (CCTBA), CAS# September 22 Stats The publication database
Hexachloroacetone (HCA) decomposes in dimethyl sulphoxide solution at room temperature In the presence of an excess of 1,3,5trinitrobenzene (TNB) the progress of the reaction can beFrom ≈ 850 °C for Cr 2 GaN (Farber and Barsoum 1999) to above 2300 °C for Ti 3 SiC 2 (Du et al 00)The decompositionPrior to depositing the cobalt layer using CVD, the surface of the dielectric material is pretreated at a temperature between 100° C and 250° C USA1 Surface treatment to
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Synonyms (3,3Dimethyl1butyne)dicobalt hexacarbonyl;HP CCTBA* High Purity dicolbalt hexacarbonyl tertbutylacetylene TDMAT Tetrakisdimethylamino Titanium TiCl4 Titanium tetrachloride WCl6 Tungsten hexachloride WCl5 Tungsten pentachloride
Incoming Term: cctba decomposition temperature,
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